Ultra-high vacuum (UHV) chamber to deposit type IV (Si, Ge) semiconductors by evaporation. C, B, Sb available for doping. Deposition is done in a variety of substrates compatible with UHV, usually heated single-crystal wafers of Si (or SOI).
The L-MBE is always operated in self-service mode backed up by the expert users, Dr. M. Garriga and Dr. M. I. Alonso. In 2020 it was employed for research tasks in two different projects of the “NANOPTO” group, led by IPs Dr. A. R. Goñi and Dr. M. Campoy-Quiles (with 77% of the time devoted to research of structures for harvesting infrared solar energy) and by Dr. J. S. Reparaz (using 23% of the time in research of structures for development of nanoscale thermal sensors).
Beating the Thermal Conductivity Alloy Limit Using Long-Period Compositionally Graded Si1–xGex Superlattices
P. Ferrando-Villalba, Shunda Chen, A. F. Lopeandía, F. X. Alvarez, M. I. Alonso, M. Garriga, J. Santiso, G. Garcia, A. R. Goñi, D. Donadio, and J. Rodríguez-Viejo.
The Journal of Physical Chemistry C 2020, 124, 36, 19864–19872 10.1021/acs.jpcc.0c06410